| PART |
Description |
Maker |
| 4126L-T60-T 4126 4126-T60-T |
HIGH FREQUENCY SWITCHING TRANSISTORS FOR BALLASTERS 200 V, NPN, Si, POWER TRANSISTOR, TO-126
HIGH FREQUENCY SWITCHING TRANSISTORS FOR BALLASTERS 高频开关晶体管BALLASTERS
|
Unisonic Technologies Co., Ltd.
友顺科技股份有限公司
UTC[Unisonic Technologies]
|
| H7N0608FM |
Transistors>Switching/MOSFETs
Silicon N Channel MOS FET Power Switching
|
Renesas Electronics Corporation
|
| MMBT2222A SMBT2222A SMBT2222A/MMBT2222A |
Switching Transistors - NPN Silicon Switching Transistor with high current gain
|
Infineon Technologies A...
Infineon Technologies AG
|
| FS30ASJ-06F FS30ASJ-06F-T13 |
Transistors>Switching/MOSFETs
High-Speed Switching Use Nch Power MOS FET
|
Renesas Electronics Corporation
|
| FS100UMJ-03F FS100UMJ-03F-A8 |
Transistors>Switching/MOSFETs
High-Speed Switching Use Nch Power MOS FET
|
http://
Renesas Electronics Corporation
|
| FS100KMJ-03F FS100KMJ-03F-A8 |
Transistors>Switching/MOSFETs
High-Speed Switching Use Nch Power MOS FET
|
Renesas Electronics Corporation
|
| H5N5016PL |
Transistors>Switching/MOSFETs
Silicon N Channel MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| H5N2306PF H5N2306PF-E |
Transistors>Switching/MOSFETs
Silicon N Channel MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| H5N2502CF |
Transistors>Switching/MOSFETs
Silicon N Channel MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| H5N3011P-E H5N3011P |
Transistors>Switching/MOSFETs
Silicon N Channel MOS FET High Speed Power Switching 通道场效应晶体管高速电源开
|
RENESAS[Renesas Electronics Corporation]
Renesas Electronics Corporation.
Renesas Electronics, Corp.
|
| 2SD2583 |
AUDIO FREQUENCY AMPLIFIER, SWITCHING NOPN SILICON EPITAXIAL TRANSISTORS
From old datasheet system
TRANSISTOR,BJT,NPN,30V V(BR)CEO,5A I(C),TO-126
AUDIO FREQUENCY AMPLIFIER/ SWITCHING NOPN SILICON EPITAXIAL TRANSISTORS
|
http://
NEC[NEC]
|
